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陈佰乐    助理教授、研究员
所在学院 信息科学与技术学院
研究方向 III-V族半导体材料和器件;短红外和中红外光电二极管和激光二极管;高速,高功率光电二极管;宽禁带半导体材料;硅光子器件
联系方式 chenbl@@shanghaitech.edu.cn
 
  个人简介  
陈佰乐于2007年本科毕业中国科学技术大学近代物理系,后赴美国弗吉尼亚大学深造。分别于2009年和2013年获得物理学硕士学位和电子工程博士学位。随后加入位于美国俄勒冈的Qrovo总部任射频产品研发工程师,从事多种不同频段的功率放大器和体声波滤波器等无线通信元器件的研发和量产工作。他于2016年1月全职加入上海科技大学信息科学与技术学院,任助理教授、研究员。
  主要研究内容  
陈佰乐博士的研究兴趣包括:III-V族半导体材料和器件,短红外和中红外光电二极管和激光二极管,高速/高功率光电二极管,宽禁带半导体材料和硅光子器件。
  代表性论文  
1. B. Chen, "Active Region Design and Gain Characteristics of InP-Based Dilute Bismide Type-II Quantum Wells for Mid-IR Lasers," IEEE Transactions on Electron Devices, vol. 64, pp. 1606-1611, 2017.

2. B. Chen and A. L. Holmes, "InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region," Optics letters, vol. 38, pp. 2750-2753, 2013.

3. B. Chen and L. H. Archie Jr, "Carrier dynamics in InP-based PIN photodiodes with InGaAs/GaAsSb type-II quantum wells," Journal of Physics D: Applied Physics, vol. 46, p. 315103, 2013.

4. B. Chen and A. Holmes Jr, "Optical gain modeling of InP based InGaAs (N)/GaAsSb type-II quantum wells laser for mid-infrared emission," Optical and Quantum Electronics, vol. 45, pp. 127-134, 2013.

5. B. Chen, J. Yuan, and A. Holmes, "Dark current modeling of InP based SWIR and MWIR InGaAs/GaAsSb type-II MQW photodiodes," Optical and Quantum Electronics, pp. 1-7, 2012.

6. B. Chen, W. Jiang, and A. Holmes Jr, "Design of strain compensated InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodes," Optical and Quantum Electronics, vol. 44, pp. 103-109, 2012.

7. B. Chen, W. Jiang, J. Yuan, A. L. Holmes, and B. M. Onat, "SWIR/MWIR InP-based PIN photodiodes with InGaAs/GaAsSb type-II quantum wells," IEEE Journal of Quantum Electronics, vol. 47, pp. 1244-1250, 2011.

8. B. Chen, W. Jiang, J. Yuan, A. L. Holmes, and B. M. Onat, "Demonstration of a Room-Temperature InP-Based Photodetector Operating Beyond 3 m," IEEE Photonics Technology Letters, vol. 23, pp. 218-220, 2011.

9. B. Chen, Q. Zhou, D. McIntosh, J. Yuan, Y. Chen, W. Sun, J. Campbell, and A. Holmes, "Natural lithography nano-sphere texturing as antireflective layer on InP-based pin photodiodes," Electronics letters, vol. 48, pp. 1340-1341, 2012.

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