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陈佰乐    助理教授
所在学院 信息科学与技术学院
研究方向 III-V族半导体材料和器件;短红外和中红外光电二极管和激光二极管;高速,高功率光电二极管;宽禁带半导体材料;硅光子器件
联系方式 chenbl@@shanghaitech.edu.cn
 
  个人简介  
陈佰乐于2007年本科毕业中国科学技术大学近代物理系,后赴美国弗吉尼亚大学深造。分别于2009年和2013年获得物理学硕士学位和电子工程博士学位。随后加入位于美国俄勒冈的Qrovo总部任射频产品研发工程师,从事多种不同频段的功率放大器和体声波滤波器等无线通信元器件的研发和量产工作。他于2016年1月全职加入上海科技大学信息科学与技术学院,任助理教授。
  主要研究内容  
陈佰乐博士的研究兴趣包括:III-V族半导体材料和器件,短红外和中红外光电二极管和激光二极管,高速/高功率光电二极管,宽禁带半导体材料和硅光子器件。
  代表性论文  
1.Baile Chen, A. L. Holmes Jr “InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region” Optics Letters, Vol. 38, Issue 15, pp. 2750-2753 (2013)

2.Baile Chen, W.Y. Jiang, Jinrong Yuan, A. L. Holmes Jr, Bora. M. Onat “SWIR/MWIR InP-based PIN Photodiodes with InGaAs/GaAsSb Type-II Quantum Wells” IEEE QUANTUM ELECTRONICS, VOL. 47, ISSUE 9, September, 2011, 1244-1250

3.Baile Chen, W.Y. Jiang, Jinrong Yuan, A. L. Holmes Jr, Bora. M. Onat.  “Demonstration of a Room Temperature InP-based Photodetector Operating beyond 3 μm”, IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 23, NO. 4, FEBRUARY 15, 2011, 218-220

4.Baile Chen, A. L. Holmes Jr “Carrier Dynamics Study of InP-based PIN Photodiodes with InGaAs/GaAsSb Type-II Quantum Wells” J. Phys. D: Appl. Phys, Vol 46 (31), 315103, 2013

5.Baile Chen, Qiugui Zhou, Dion C.McIntosh, Jinrong Yuan, Yaojia Chen,  Wenlu Sun, Joe C. Campbell, A. L. Holmes Jr.  “Natural Lithography Nano-sphere Texturing as Antireflective Layer on InGaAs PIN Photodiodes” IEEE Electronics Letters, October 11, 2012, Volume 48, Issue 21, p.1340–1341

6.Baile Chen, W.Y. Jiang, A. L. Holmes Jr, “Design of Strain Compensated InGaAs/GaAsSb Type-II Quantum Well Structures for Mid-infrared Photodiodes” Optical and Quantum Electronics, Volume 44, Issue 3 (2012), Page 103-109

7.Baile Chen, A. L. Holmes Jr, “Optical Gain Modeling of InP Based InGaAs(N)/GaAsSb Type-II Quantum Wells Laser for Mid-Infrared Emission” Optical and Quantum Electronics: Volume 45, Issue 2 (2013), Page 127-134 

8.Baile Chen, Jinrong Yuan, A. L. Holmes Jr. “Dark Current Modeling of InP based SWIR and MWIR InGaAs/GaAsSb Type-II MQW Photodiodes”, Optical and Quantum Electronics: Volume 45, Issue 3 (2013), Page 271-277 

9.Wenjie Chen, Baile Chen, Jinrong Yuan, Archie Holmes, Patrick Fay “Bulk and interfacial deep levels observed in In0.53Ga0.47As/GaAs0.5Sb0.5 multiple quantum well photodiode” Applied Physics Letters 101, 052107 (2012)

10.Jinrong Yuan, Baile Chen, Archie L. Holmes, Jr. “Improved Quantum Efficiency of InGaAs/InP Photodetectors using a Ti/Au-SiO2 Phase-Matched-Layer reflector”, Electronics Letters Volume 48, Issue 19, p.1230–1232

11.Jinrong Yuan, Baile Chen, Archie L. Holmes, Jr. “Near-infrared quantum efficiency of uncooled photodetectors based on InGaAs/GaAsSb quantum wells lattice-matched to InP” Electronics Letters, September 29, 2011 Volume: 47 Issue:20, page(s): 1144 – 1145
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